FZ400R12KS4—中文数据手册_图文

技术信息/TechnicalInformation
IGBT-模块 IGBT-modules

FZ400R12KS4

62mmC-Series模块采用第二高速IGBT和碳化硅二极管针对高频应用 62mmC-SeriesmodulewiththefastIGBT2forhigh-frequencyswitching

VCES = 1200V IC nom = 400A / ICRM = 800A 典型应用 ? 高频开关应用 ? 医疗应用 ? 电机传动 ? 谐振逆变器应用 ? 伺服驱动器 ? UPS系统 电气特性 ? 高短路能力,自限制短路电流 ? 低开关损耗 ? 无与伦比的坚固性 ? VCEsat带正温度系数 机械特性 ? 封装的CTI>400 ? 高爬电距离和电气间隙 ? 绝缘的基板 ? 铜基板 ? 标封装 TypicalApplications ? HighFrequencySwitchingApplication ? MedicalApplications ? MotorDrives ? ResonantInverterAppliccations ? ServoDrives ? UPSSystems ElectricalFeatures ? High Short Circuit Capability, Self Limiting Short CircuitCurrent ? LowSwitchingLosses ? UnbeatableRobustness ? VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures ? PackagewithCTI>400 ? HighCreepageandClearanceDistances ? IsolatedBasePlate ? CopperBasePlate ? StandardHousing

ModuleLabelCode
BarcodeCode128 ContentoftheCode
ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek)
dateofpublication:2013-10-02 revision:3.4 1 ULapproved(E83335)

Digit
1-5 6-11 12-19 20-21 22-23

DMX-Code

preparedby:MB approvedby:WR

技术信息/TechnicalInformation
IGBT-模块 IGBT-modules

FZ400R12KS4

IGBT,逆变器/IGBT,Inverter
集电极-发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极-发射极峰值电压 Gate-emitterpeakvoltage

最大额定值/MaximumRatedValues
Tvj = 25°C TC = 70°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C tP = 1 ms TC = 25°C, Tvj max = 150  VCES  1200 400 510 800 2500 +/-20 min. IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V IC = 16,0 mA, VCE = VGE, Tvj = 25°C VGE = -15 V ... +15 V Tvj = 25°C f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V VCE = 1200 V, VGE = 0 V, Tvj = 25°C VCE = 0 V, VGE = 20 V, Tvj = 25°C IC = 400 A, VCE = 600 V VGE = ±15 V RGon = 2,2 ? IC = 400 A, VCE = 600 V VGE = ±15 V RGon = 2,2 ? IC = 400 A, VCE = 600 V VGE = ±15 V RGoff = 2,2 ? IC = 400 A, VCE = 600 V VGE = ±15 V RGoff = 2,2 ? IC = 400 A, VCE = 600 V, LS = 85 nH VGE = ±15 V, di/dt = 4000 A/?s RGon = 2,2 ? IC = 400 A, VCE = 600 V, LS = 85 nH VGE = ±15 V RGoff = 2,2 ? VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt 每个IGBT/perIGBT 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K)  Tvj = 25°C Tvj = 125°C Tvj = 25°C Tvj = 125°C Tvj = 25°C Tvj = 125°C Tvj = 25°C Tvj = 125°C Tvj = 25°C Tvj = 125°C Tvj = 25°C Tvj = 125°C Tvj = 25°C Tvj = 125°C VCE sat VGEth QG RGint Cies Cres ICES IGES td on 4,5        typ. 3,20 3,85 5,5 4,20 1,3 26,0 1,70   0,10 0,11 0,06 0,07 0,53 0,55 0,03 0,04 max. 3,70 6,5     5,0 400  V V V ?C ? nF nF mA nA ?s ?s ?s ?s ?s ?s ?s ?s mJ mJ mJ mJ  V  A A

IC nom  IC ICRM Ptot VGES   

 A  W  V

特征值/CharacteristicValues
集电极-发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极-发射极截止电流 Collector-emittercut-offcurrent 栅极-发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload 上升时间(电感负载) Risetime,inductiveload 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload 下降时间(电感负载) Falltime,inductiveload 开通损耗能量(每脉冲) Turn-onenergylossperpulse 关断损耗能量(每脉冲) Turn-offenergylossperpulse 短路数据 SCdata 结-外壳热阻 Thermalresistance,junctiontocase 外壳-散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions

tr





td off





tf





Eon



22,0



Eoff ISC RthJC RthCH Tvj op

    -40

29,0

 

tP ≤ 10 ?s, Tvj = 125°C

2600  0,016 

A

0,05 K/W K/W 125 °C

preparedby:MB approvedby:WR

dateofpublication:2013-10-02 revision:3.4 2

技术信息/TechnicalInformation
IGBT-模块 IGBT-modules

FZ400R12KS4

二极管,逆变器/Diode,Inverter
反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t-值 I?t-value

最大额定值/MaximumRatedValues
Tvj = 25°C  tP = 1 ms VR = 0 V, tP = 10 ms, Tvj = 125°C VRRM  IF IFRM I?t    min. IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V Tvj = 25°C Tvj = 125°C VF IRM  1200 400 800 35000 typ. 2,00 1,70 280 420 24,0 64,0 16,0 32,0  0,028  125 max. 2,40 V V A A ?C ?C mJ mJ  V  A  A  A?s

特征值/CharacteristicValues
正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗(每脉冲) Reverserecoveryenergy 结-外壳热阻 Thermalresistance,junctiontocase 外壳-散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions

IF = 400 A, - diF/dt = 4000 A/?s (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V IF = 400 A, - diF/dt = 4000 A/?s (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V IF = 400 A, - diF/dt = 4000 A/?s (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V 每个二极管/perdiode 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) 



Qr





Erec RthJC RthCH Tvj op

   -40



0,085 K/W K/W °C

preparedby:MB approvedby:WR

dateofpublication:2013-10-02 revision:3.4 3

技术信息/TechnicalInformation
IGBT-模块 IGBT-modules

FZ400R12KS4

模块/Module
绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳-散热器热阻 Thermalresistance,casetoheatsink 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque RMS, f = 50 Hz, t = 1 min.  基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal  每个模块/permodule λPaste=1W/(m·K)/λgrease=1W/(m·K)  TC=25°C,每个开关/perswitch  螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝M4根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote  VISOL      CTI      min. RthCH LsCE RCC'+EE' Tstg M    -40 3,00 1,1 M 2,5 G  340 5,0  Nm g 2,5 Cu Al2O3 25,0 19,0 25,0 10,0 > 400 typ. 0,01 16 0,50    125 6,00 2,0 max. K/W nH m? °C Nm Nm  kV    

 mm  mm  

重量 Weight

preparedby:MB approvedby:WR

dateofpublication:2013-10-02 revision:3.4 4

技术信息/TechnicalInformation
IGBT-模块 IGBT-modules

FZ400R12KS4
输出特性IGBT,逆变器(典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125°C 800

输出特性IGBT,逆变器(典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 800 700 600 500 IC [A] 400 300 200 100 0 Tvj = 25°C Tvj = 125°C

700 600 500 IC [A] 400 300 200 100 0

VGE = 8V VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VCE [V]

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VCE [V]

传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 800 700 600 500 400 300 200 Tvj = 25°C Tvj = 125°C

开关损耗IGBT,逆变器(典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=2.2?,RGoff=2.2?,VCE=600V 100 Eon, Tvj = 125°C Eoff, Tvj = 125°C 80

60 E [mJ] 40 20 5 6 7 8 9 VGE [V] 10 11 12 0

IC [A]

100 0

0

100

200

300

400 IC [A]

500

600

700

800

preparedby:MB approvedby:WR

dateofpublication:2013-10-02 revision:3.4 5

技术信息/TechnicalInformation
IGBT-模块 IGBT-modules

FZ400R12KS4
瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 0,1

开关损耗IGBT,逆变器(典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=400A,VCE=600V 200 180 160 140 120 100 80 60 40 20 0 Eon, Tvj = 125°C Eoff, Tvj = 125°C

ZthJC : IGBT

ZthJC [K/W]

E [mJ]

0,01

i: 1 2 3 4 ri[K/W]: 0,003 0,0165 0,016 0,0145 τi[s]: 0,01 0,02 0,05 0,1

0

2

4

6

8 RG [?]

10

12

14

16

0,001 0,001

0,01

0,1 t [s]

1

10

反偏安全工作区IGBT,逆变器(RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=2.2?,Tvj=125°C 900 800 700 600 IC, Modul IC, Chip

正向偏压特性二极管,逆变器(典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 800 700 600 500 Tvj = 25°C Tvj = 125°C

IC [A]

IF [A] 0 200 400 600 800 VCE [V] 1000 1200 1400 revision:3.4 6

500 400 300 200 100 0

400 300 200 100 0

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 VF [V]

preparedby:MB approvedby:WR

dateofpublication:2013-10-02

技术信息/TechnicalInformation
IGBT-模块 IGBT-modules

FZ400R12KS4
开关损耗二极管,逆变器(典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=400A,VCE=600V 40

开关损耗二极管,逆变器(典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=2.2?,VCE=600V 40 Erec, Tvj = 125°C 35 30 25 E [mJ] 20 15 10 5 0

Erec, Tvj = 125°C 35 30 25 E [mJ] 20 15 10 5 0

0

100

200

300

400 IF [A]

500

600

700

800

0

2

4

6

8 RG [?]

10

12

14

16

瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0,1 ZthJC : Diode

ZthJC [K/W]

0,01

i: 1 2 3 4 ri[K/W]: 0,0051 0,02805 0,0272 0,02465 τi[s]: 0,01 0,02 0,05 0,1

0,001 0,001 preparedby:MB approvedby:WR

0,01

0,1 t [s]

1

10

dateofpublication:2013-10-02 revision:3.4 7

技术信息/TechnicalInformation
IGBT-模块 IGBT-modules

FZ400R12KS4

接线图/circuit_diagram_headline

封装尺寸/packageoutlines

In fin e o n

preparedby:MB approvedby:WR

dateofpublication:2013-10-02 revision:3.4 8

技术信息/TechnicalInformation
IGBT-模块 IGBT-modules

FZ400R12KS4

使用条件和条款
 使用条件和条款 产品规格书中的数据是专门为技术人员提供的,您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的,任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外,产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话,请联系我们负责你的销售部门(详情查询 www.infineon.com)。对那些特别感兴趣的问题我们将提供相应的应用手册 由于技术需要,我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门 如果您想将我们的产品用于航天,健康,危及生命或者生命维持等应用,请申明。 请注意,对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 -建立联合的测试和出厂产品检查,我们可以根据测试的实际情况供货 如果有必要,请根据实际需要将类似的说明给你的客户 保留产品规格书的修改权

Terms&Conditionsofusage
 Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved.

preparedby:MB approvedby:WR

dateofpublication:2013-10-02 revision:3.4 9


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